In situ ion implantation for quantification in secondary-ion mass spectrometry

Abstract

The primary ion beam column of a secondary ion mass spectrometer has been used to produce an internal quantification standard via in situ ion implantation. Subsequent depth profile analysis has been done in the instrument after switching to another primary projectile. In this way, the interfacial oxygen concentration between an amorphous and crystalline Si layer and the hydrogen content (∼ 30 at %) in a 48 nm amorphous carbon layer on a silicon substrate have been determined. The use, in the latter case, of deuterium as an in situ implant exemplifies that minor isotopes can be employed for the quantification in secondary-ion mass spectrometry of components with high concentrations while achieving an accuracy of better than ±50%