Defect Structure of Diamond Film at the Interface with Amorphous Carbon

Abstract

ABSTRACTDiamond films prepared by microwave plasma chemical vapor deposition, using a gas mixture of methane and hydrogen with ethanol, were formed on silicon substrates. Highresolution transmission electron microscopy was employed to characterize the microstructure at interface regions. It was found that the diamond crystals were grown on an amorphous carbon layer. Twins and stacking faults were observed at the regions interfaced with the amorphous carbon layer, suggesting that the defects may already exist in the nucleation stage and at the very first stage of growth. Also, some diamond nuclei embedded in the amorphous layer were observed.