In-situ GaAs selective-area growth on a patterned GaN mask by MOMBE using TDMAAs

Abstract

In the in-situ selective-area growth of GaAs using an atomically thin cubic GaN mask, tris-dimethylaminoarsine (TDMAAs) was used in order to reduce carbon incorporation into the selectively grown GaAs layer. A new patterning method using a GaN mask combined with local Ga deposition was also applied. As a result, GaAs was selectively grown in the opened area of a GaN mask by using TDMAAs and TMG. It was found that the GaN mask is stable to TDMAAs, which degrades photo-oxidized GaAs as a mask for the in-situ selective-area growth of GaAs under the same experimental conditions. Carbon incorporation into the GaAs epitaxial layers was two orders of magnitude lower than that in the case of using conventional As 4 and TMG.