In situ selective area growth of GaAs, AlAs, and AlGaAs using MOMBE

Abstract

We investigated source-gas combinations for realizing the in situ selective area growth (SAG) of GaAs, AlAs, and AlGaAs using an atomically thin GaN mask. Trimethylgallium (TMG), dimethylaluminumhydride (DMAH), dimethylethylaminealane (DMEAA), trisdimethylaminoarsine (TDMAAs), and As 4 were examined as source materials. As a result, GaAs SAG was realized using (TMG, As 4) and (TMG, TDMAAs), and AlAs SAG was also performed using (DMAH, TDMAAs). As for GaAs and AlAs SAG, TDMAAs is effective for reducing the carbon contamination. Furthermore, AlGaAs SAG was realized by using TMG, DMAH, and TDMAAs.