In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications

Abstract

This study investigates the viability of TiO2 as a high-k material in metal-insulator-metal (MIM) capacitors, essential components influencing semiconductor memory device performance. Traditional materials like ZrO2 and HfO2 face intrinsic limitations, prompting exploration into TiO2's potential, particularly in its rutile crystalline structure with a remarkable dielectric constant of 170. Leveraging atomic layer deposition (ALD), TiO2 emerges as a promising candidate for MIM capacitors. The study focuses on the practical application of a MoO2 electrode in TiO2 dielectric film MIM capacitors, demonstrating its potential to induce rutile crystallization in both MoO2 and TiO2 while suppressing morphology degradation. Insights into the mechanism of TiO2 rutile crystallization contribute to the development of an optimized MoO2/TiO2-based MIM capacitor, offering a significant advancement in addressing challenges and improving the performance of next-generation semiconductor memory devices.