Abstract
Thin film electronic devices that employ resistance change responses of Pt / Ti films to detect gas species have been microfabricated at the University of Michigan. Atomic force microscopy (AFM) is used to investigate morphology of the Pt / Ti sensing films deposited on the microfabricated device. These Pt / Ti sensing films are strongly influenced by many factors, making it difficult to determine the exact relationship between film structure, chemical sensitivity, and selectivity. In-situ AFM investigations of Pt / Ti films on this device at elevated temperatures provides the opportunity for real time observation of film morphology changes under controlled conditions, testing sensing film stability during device operation, and correlating film structure to resistance.Observation of the Pt / Ti film surface and in-situ resistance measurements at elevated temperatures are possible due to the construction of the sensing device. The sensors are based on chemically active thin films deposited on a micromachined silicon window, supported by a 300 μn thick silicon rim.
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