In 0.49Ga 0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy

Abstract

We present a study on the growth of lattice-matched InGaP on patterned GaAs substrates by chemical beam epitaxy. An experimental analysis of the growth on planes [1 0 0] and [1 1 1]A as a function of growth temperature and pattern dimension is presented. A simple surface kinetics model is proposed allowing the determination of diffusion length, incorporation time and free species lifetime on both planes. Incorporation on planes [1 1 1]A reduces with increase in temperature and there is indication of a relationship between evaporation time and nucleation sites on [1 1 1]A planes