Abstract
Structural and optical properties of Cd1−xHgxGa2Se4 and Cd1−xHgxGa2Se4:Co2+ single crystals grown by the chemical transport reaction method have been investigated. It has been found that these single crystals have a defect chalcopyrite structure and a direct optical energy gap. It has been seen that the optical energy gap decreases as a composition x increases and as a cobalt impurity is introduced. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Impurity optical absorption peaks due to a cobalt atom were observed in the optical-absorption measurements of Cd1−xHgxGa2Se4:Co2+ single crystals. It has been analyzed that the impurity optical-absorption peaks are attributed to the electronic transition between the split energy levels of a Co2+ ion occupying a cubic Td symmetry site of the host lattice.
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