Abstract
We investigate the excitation behavior of a repulsive impurity doped quantum dot under the influence of an oscillatory external electric field. We have considered Gaussian impurity centers doped at on-center position. The investigation reveals that a variation in the strength and spatial stretch of the dopant causes maximization and minimization in the average excitation rate, respectively. The findings are expected to have important applications involving quantum dot nanodevices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
