Influence of relative confinement oscillation and concomitant oscillatory impurity domain on excitation profile of doped quantum dots

Abstract

We investigate the excitation behavior of a repulsive impurity doped quantum dot under the combined influence of oscillatory confinement potential and oscillatory magnetic field. In view of this the ratio of two oscillation frequencies has been exploited meticulously. We have considered Gaussian impurity centers. The investigation reveals that a variation in the aforesaid frequency ratio causes maximization in the time-average excitation rate for different dopant locations. To make the analysis more realistic and rational, concomitant oscillation in the spatial stretch of the dopant is also considered in a stepwise manner. Although the consideration makes the calculation much more tedious and involved, yet this adequately describes the role played by the undulating impurity domain exclusively in modulating the excitation rate.