Abstract
The optoelectronic characteristics of gallium-doped ZnO ternary alloy transparent conductive oxide were improved through titanium (Ti) doping, and showed enhanced optoelectronic properties, and crystallite quality by radio frequency magnetron sputtering. The room-temperature photoluminescence measurement showed improved near band edge emission for ZnO peaks, and suppressed deep defect level emission at the green light band. The study results show that the lowest thin film resistivity was 4.95×10−4Ω-cm, with a mobility and carrier concentration of 4.8cm2/V-s and 2.64×1021cm−3, respectively. The superior carrier concentration of Ti-doped GZO alloys (>1021cm−3) with high figure of merit (35.3×10−3Ω−1), demonstrating the pronounced contribution made by Ti doping, and is highly suitable for the optoelectronic device applications.
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