Abstract
In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to Si) of ZrO 2 thin films in the HBr/CF 4 high density plasma (HDP) system. The maximum etch rate of 70.8 nm/min for ZrO2 thin films was obtained at HBr(75%)/ CF 4 (25%) gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter such as HDP chamber pressure. The X-ray photoelectron spectroscopy (XPS) analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CF 4 -containing plasmas.
Published Version
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