Abstract
In this work, we investigated the etching characteristics of HfO2 thin films and the selectivity of HfO2 to SiO2 in an O2/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rates of HfO2 thin films was 70 nm/min at a gas mixing ratio of O2/CF4/Ar (3:4:16 sccm). At the same time, the etch rate were measured as a function of the etching parameters, such as the ICP RF power, DC-bias voltage, and process pressure. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CF4-containing plasmas.
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