Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Abstract

Herein, polycrystalline InN films with flat surfaces and improved electron mobility were grown atop AlN orientation layers on glass substrates by pulsed sputtering deposition. X-ray diffraction and transmission electron microscopy revealed that the InN films comprise dense c-axis-oriented grains. The electron mobilities of these c-axis-oriented InN films were higher than those of the InN directly grown on the glass substrate, reaching as high as 427 cm2 V−1 s−1. To demonstrate a practical application of the developed InN film, a thin-film transistor was fabricated on a 5-nm-thick c-axis-oriented InN film on an AlN orientation layer and operated successfully with a field-effect mobility of 60 cm2 V−1 s−1.