Abstract
AbstractWe have grown InN films on MgAl2O4(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe2O4(111) substrates. It has been revealed that InN(0001) films grow on MgAl2O4(111) with an in‐plane epitaxial relationship of InN[1$ \bar 1 $00] // MgAl2O4[1$ \bar 1 $0], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30° rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl2O4 and those on (Mn,Zn)Fe2O4 led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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