Abstract
We grew thick InN films on yttria‐stabilized zirconia (YSZ) substrates by high‐growth‐rate pulsed sputtering deposition. X‐ray diffraction analysis revealed that the in‐plane orientation distribution of the InN (0001) films on YSZ decreased as the film thickness increased. The edge dislocation density of the 9.0‐µm‐thick InN film grown at a rate of 6 µm h−1 is calculated to be 1.7 × 109 cm−2, and the atomically flat surface exhibited a step‐and‐terrace structure. In addition, the crystallinity of semipolar InN is improved by increasing the film thickness. These results indicate that high‐growth‐rate pulsed sputtering deposition can be used to prepare InN substrates for the fabrication of high‐speed electron devices and InGaN‐based, long‐wavelength light‐emitting devices.
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