Abstract
Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiO[Formula: see text]-based Schottky-type diode has been demonstrated. Compared with the Ag/TiO[Formula: see text]/Ti structure Schottky-type diode, by embedding an extra ZrO2 insulating layer between the Ag/TiO[Formula: see text] interface, an extremely high rectifying ratio of 109 can be obtained in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device. The improvement of the electrical properties in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO2 layer after switching on.
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