Improvgement of Voc for μc-Si: H/poly-Si p—n junction solar cells

Abstract

The p-n junction solar cells consisting of p-type hydrogenerated microcrystalline suilicon (p-μc-Si:H) and n-type single crystalline silicon (n-c-Si) or cast polycrystalline silicon (n-poly-Si) have been investiagated. By inseerting a thin oxide layer (SiO x) between p-μcSi:H and n-c-Si or n-poly-Si and by optimizing fabrication processes. V oc as high as 648 was obtained for the p-μc-Si/SiO x/n-c-Si cell, and 623 mV for the p-μc-Si:H/SiO x/n-poly-Si cell. The effects and role of the inserted oxide layer in the p-μc-Si:H/n-c-Si cell are discussed.