Formation of PN junction with hydrogenated nicrocrystalline silicon

Abstract

The pn junction solar cells consisting of p-type hydrogenated microcrystalline silicon (p- mu c-Si:H) and n-type single-crystalline silicon (n-c-Si) or cast polycrystalline silicon (n-cast-Si) were investigated. By using a thin p- mu c-Si:H layer and inserting an oxide layer between the p- mu c-Si:H and the n-c-Si or n-cast-Si, efficiencies as high as 14.27% for a p- mu c-Si:H/n-c-Si cell and 13. 19% for a p- mu c-Si:H/n-cast-Si cell were obtained. It was found that the interface oxide layer effectively improves the stability of a p- mu c-Si:H/n-cast-Si cell. >