Abstract
The dark resistivity of cw Ar+ ion laser annealed chemical bath deposited CdS films has been measured. A two-decade decrement of the electrical resistivity, as compared to the unannealed samples, is reported. A threshold laser power density for reproducible annealing has been found to be ≳50 W/cm2. Log ρ vs 1/T plots were used to calculate the mobility ratio b = μn/μp. This ratio shows a slight increment on laser annealed but it is not sufficient to explain the resistivity changes.
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