Abstract
Hard x-ray masks for ultradeep x-ray lithography (UDXRL) at synchrotron radiation sources, such as the Advanced Photon Source, require a gold absorber thickness of 20–100 μm on a low-Z substrate, such as silicon, graphite, or beryllium. Graphite sheets of 0.5 mm were used for the fabrication of x-ray masks by standard optical lithography using a SU-8 photoresist. The conductivity of graphite is sufficient to perform electroplating directly without the need for a metal-plating base layer. Gold electroforming was used to deposit a 85-μm-thick patterned absorber layer. The masks were used for UDXRL using hard x-rays at the Advanced Photon Source.
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