Abstract
The stabilization of the resistive switching characteristics is important toresistive random access memory (RRAM) device development. In this paper,an alternative approach for improving resistive switching characteristics inZrO2-based resistive memory devices has been investigated. Compared with theCu/ZrO2/Pt structure device, byembedding a thin TiOx layerbetween the ZrO2 and theCu top electrode, the Cu/TiOx–ZrO2/Pt structure device exhibits much better resistive switching characteristics.The improvement of the resistive switching characteristics in theCu/TiOx–ZrO2/Pt structure device might be attributed to the modulation of the barrier height at theelectrode/oxide interfaces.
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