Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Abstract

Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization. Owing to filamentary nature of the resistive switching devices, variability of the resistive switching characteristics can be reduced by doping, where conductive filaments can easily grow due to reduction in the formation energy of oxygen vacancies. In this work, multilayer CeO2/Al/CeO2 films were prepared through radio-frequency (rf) sputtering at room temperature to study the effect of oxygen annealing on the resistive switching characteristics. Device with CeO2/Al/CeO2 multilayer structure after annealing exhibits reduction of defects and improved switching endurance, good data retention, and uniformity in operational parameters. The resistive switching characteristics have been simulated using space charge limited conduction and Schottky emission at high field region of the high resistance state, which is well fitted by linear curve fitting analysis. Improvement in the switching characteristics revealed that Al charge trapping layer has diffused into the CeO2 matrix, which might have resulted in lower density of oxygen vacancies due to oxygen annealing. Experimental I–V analysis indicate that oxygen annealing is an effective approach to enhance the switching characteristics of RRAM devices.