Abstract
The CZTS thin film fabricated based on Cu-Zn-Sn (CZT) or Cu-Zn-Sn-S precursors have difficulties in making a pinhole-free and flat CZTS thin film. In this paper, Cu2ZnSnS4(CZTS) thin films were fabricated based on oxygen-containing Cu-Zn-Sn precursors. By intentionally introducing O into Cu-Zn-Sn precursors, sudden volume expansion from precursor to CZTS thin films can be avoided and smooth CZTS film surfaces without pinholes were produced. Oxygen-containing Cu-Zn-Sn precursors were prepared by sputtering ZnO, Cu, and Sn targets successfully. MoS2 formation could be suppressed by introducing ZnO as a barrier layer between CZTS absorber and Mo back contact interface during the sulfurizing process under high sulphur pressure. The short circuit current density (Jsc) and open circuit voltage (Voc) of CZTS solar cells could be increased by optimizing the sulfurization temperature. And the best conversion efficiency of CZTS solar cells from oxygen-containing precursors was 4.97 %, with an open circuit voltage of 566 mV, a short circuit current density of 21.44 mA/cm-2 and a fill factor of 41 %.
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