Abstract
Conventional organic static induction transistors (OSITs) have been directly fabricated on a source electrode formed on a substrate without the investigation of the effect of a surface treatment on device characteristics. We have fabricated the OSITs based on pentacene thin film with an ultrathin copper phthalocyanine (CuPc) layer. The influence of depositing this ultrathin CuPc layer on the source electrode on static characteristics was investigated. The obtained results provided an important fact indicating that a high on/off ratio of 230 and a high current of 3 µA in an organic SIT are achieved by the formation of a hole injection barrier that works as a tunneling layer on a source electrode. The barrier effectively controls the tunnel current from the source electrode by applying a gate voltage.
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