Abstract
Dual gated graphene field effect transistors (GFETs) were fabricated using mechanically stacked large area chemical vapor deposited (CVD) graphene bilayer. The devices were characterized in ambient conditions at various back gate voltages. Higher induced carrier densities were observed in the device channels at increasingly negative back gate voltages. Also, enhanced tendency to saturation was observed. These observations indicate that mechanically stacked bilayer GFETs can be potential candidates for future graphene circuit applications where a lower output conductance is desired for maximum intrinsic voltage gain.
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