Abstract
A high efficiency frequency doubler is realized based on a single embedded gate (EG) graphene field effect transistor (GFET) with natural Al oxidation dielectrics. Due to elimination of the step of depositing gate dielectrics, the fabrication process of the EG-GFET is improved compared to conventional EG-GFETs. The capacitive efficiency of the EG-GFET is improved up to 80 times compared to the conventional silicon back gate (BG) GFET with 300 nm thick SiO2, which is higher than that of most conventional EG-GFETs. Thanks to the high capacitive efficiency, the conversion gain of the frequency doubler is 14 times higher than that of the BG-GFET based frequency doubler.
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