Abstract
A mixed-NiOx/NiOy-film-based unipolar-type resistive switching memory device is proposed and fabricated. Mixed NiOx/NiOy films were prepared by two-step film deposition followed by furnace annealing. Mixed phases of Ni2O3 and NiO coexist across the mixed NiOx/NiOy films. Compared with a single-NiOy-film-based memory device, the mixed-NiOx/NiOy-film-based memory device shows improved unipolar resistive switching performances, including high ON/OFF ratio, sufficient operation voltage window, and good endurance characteristics. The improved memory performance could be attributed to the effect of oxygen-rich NiOx with more oxygen-rich Ni2O3, which can supply sufficient oxygen ions (O2−) for resistive switching in mixed-NiOx/NiOy-film-based resistive random access memory (RRAM) devices.
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