Improved thermal and optical properties of Al-doped Sn2Se3 phase change material

Abstract

Al-doped Sn2Se3 phase change material has higher crystallization temperature and lower conductivity than Ge2Sb2Te5 material. A series of optical constants of Al-doped Sn2Se3 materials are measured by spectroscopic ellipsometry measurement. The energy band gap is broadened after Al doping and the grain size becomes smaller. The optical reflectivity is reduced while the reflectivity contrast is enhanced. The phase transition speed between the amorphous and crystalline states is investigated by the picosecond laser pulses. A fast phase change speed is observed for Al-doped Sn2Se3 material.