Abstract
The phase change characteristics of nitrogen doping Zn15Sb85 thin films were investigated by in situ film resistance measurements. The crystallization temperature and activation energy for crystallization of thin films increased with the increase of nitrogen doping concentration. Compared with Zn15Sb85, nitrogen doping Zn15Sb85 thin films exhibited higher crystalline resistance, which is beneficial for the reduction of writing current of phase change memory. The analysis of X-ray diffractomer indicates that the films with doping of nitrogen can refine the grain size. A smaller density change before and after phase change for N-doped Zn15Sb85 thin films was obtained from X-ray reflectivity. The phase transition speed between the amorphous and crystalline state was investigated by the picosecond laser pulses.
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