Abstract
Nitrogen doping is applied to improve the thermal stability and power consumption of Sb70Se30 phase change thin film. Comparing to un-doped Sb70Se30 thin film, N-doped Sb70Se30 thin film has a higher crystallization temperature and better data retention. The measurement of atomic force microscopy indicated that the crystallization is inhibited and the surface of thin films becomes smoother after N doping. The analysis of X-ray diffraction proved that nitrogen doping can suppress the grain growth of the films and limit the grain size. The phase transition speed between the amorphous and crystalline state was investigated by the picosecond laser pulses. Phase change memory devices based on N-doped thin films were fabricated to test and evaluate the electrical properties. The results indicate that nitrogen-doped Sb70Se30 films have the potential in phase change memory application.
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