Abstract
Abstract A modified vapor growth furnace for HgI 2 and a new two-parts growth ampoule containing a removable seal has been developed. The new ampoule allows several growth sequences during the same or different experiments. The new furnace is also equipped with a 3D moving cold finger for the control of selective nucleation, which reduces the total time required for a given growth run. The new ampoule permits introduction of a large variety of substrates (up to 5×5 cm). Controlled amounts of doping materials are move easily charged into the new ampoule even in the middle of a growth run.
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