Abstract
A new technique for crystal growth was designed in the present work. The electrical conductivity and Hall effect of the TlInS2 single crystals grown by this technique were measured in the temperature range 150 to 500 K. From the measurements, the conductivity type, the energy gap, ionization energy of the impurity level, Hall mobility, and carrier concentration were determined. The measurements revealed also the presence of phase transitions at 189 and 220 K in the crystal.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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