Abstract
A 9.77 nm HfO2 thin film has been deposited on Ge substrate by ALD method. Rapid Thermal Oxidation (RTO) and Rapid Thermal Nitridation (RTN) have been used to form the gate interlayers (ILs) of GeO2 and GeON between them. High-frequency Capacitance-Voltage (C-V), Conductance-Voltage (G-V) techniques and Current-Voltage (I-V) measurement were used to obtain the electrical properties of the high-k MOS capacitor. By assimilating a thin GeON interlayer, excellent MOS capacitors with very small capacitance–voltage hysteresis and low gate leakage have been demonstrated. The results suggest that the physical and electrical properties (K, Dit, Qeff, etc) improved by rapid thermal annealing (RTA) in nitrogen ambient, which improves the interface properties of HfO2/Si due to the densification of HfO2 thin films. We found that the GeON/Ge gate stack exhibit a reduced equivalent oxide thickness (3.23 nm), interfacial trap density, effective oxide charges (Qeff), C–V hysteresis and leakage current.
Published Version
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