Abstract
ABSTRACTVarious surface pre-cleaning processes for rapid thermal in-situ polysilicon/oxide/silicon stacked gate formation have been evaluated. MOS capacitors have been fabricated to assess the effects of surface pre-cleaning on the quality of both Rapid Thermal Oxide (RTO) and Rapid Thermal Chemical Vapor Deposition (RTCVD) oxide. Measurement results have shown that, 1) High temperature (≥ 900 °C) rapid thermal cleaning in Ar, H2 or high vacuum (10−8 Torr) ambients can lead to MOS gates with high leakage current if RTO is used to form the gate oxide, 2) The standard Huang clean and ultra-violet ozone (UV/O3) treatments can improve the film quality for both deposited and thermally grown oxide, and 3) Compared with RTO, the breakdown field of the RTCVD oxide is less dependent on the surface pre-cleaning treatment. These results indicate that silicon wafer surface cleaning techniques typically used for silicon epitaxial processes are not necessarily applicable to oxide film formation in RTP reactors.
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