Abstract
A method is described which leads to a substantial improvement in the depth resolution of sputter-depth profiles obtained using Auger electron spectroscopy. Two ion guns are used to develop the profile, each symmetrically inclined to the surface normal, whose effect is to suppress the formation of ion induced topography. The effectiveness of the method is illustrated by comparing profiles obtained using one and two ion guns through the same Ag/Cu multi-layer thin film sandwich structure.
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