Abstract
AbstractAn ultrahigh vacuum floating‐type low‐energy ion gun (UHV‐FLIG) with a differential pumping system was developed. The developed UHV‐FLIG ensured high ion current densities of ∼45 and ∼20 µA cm−2 for Ar+ ions of 300 and 100 eV, respectively, under the UHV condition of the analysis chamber below ∼4 × 10−6 Pa. The application of the developed UHV‐FLIG to Auger electron spectroscopy (AES) sputter depth profiling of a GaAs/AlAs superlattice material revealed that the ultimate high depth resolution of ∼1.0 nm was achieved by sputter etching using 100 eV Ar+ ions. The present results confirmed that lowering the primary energy of Ar+ ions to 100 eV is still significantly effective for achieving higher depth resolution in sputter depth profiling. Copyright © 2005 John Wiley & Sons, Ltd.
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