Abstract
Auger electron spectroscopy (AES) and X-ray electron spectroscopy XPS sputter depth profiling with 3 keV Ar + ions of a Ta Si multilayer structure with 20 nm double layer thickness showed a pronounced asymmetric shape of the measured profiles of tantalum and silicon. In the region of the increasing slope of the silicon signal a sudden change in the gradient was observed. A detailed study of the chemical shift of Ta 4f peaks in the XPS spectra and the Si LVV peak in AES spectra with respect to standard TaSi 2, pure silicon and metalic tantalum revealed an ion-induced chemical bonding during profiling. The observed chemical shift in the region of the change in slope is attributed to TaSi 2 formation, resulting in a change in the sputtering rate. Crater edge profiling by scanning Auger microscopy reproduced the sputtering profiles with improved resolution.
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