Abstract
In this paper, we, for the first time, present the effects of the thermal annealing of the W/SiO2 multi-layer Bragg reflectors on the resonance characteristics of the ZnO-based film bulk acoustic wave resonator (FBAR) devices. In order to improve the resonance characteristics of the FBAR devices, we employed a thermal annealing process after the Bragg reflectors were formed on a silicon substrate using a radio frequency (RF) magnetron sputtering technique. As a result, the resonance characteristics of the FBAR devices were observed to strongly depend on the annealing conditions applied to the Bragg reflectors. The FBAR devices with the Bragg reflectors annealed at 400°C/30 min showed excellent resonance characteristics as compared to those with the non-annealed (as-deposited) Bragg reflectors. The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonance characteristics of the future FBAR devices with multi-layer Bragg reflectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
