Abstract
Thermally grown NiOx and Cu-doped NiOx (Cu:NiOx) thin films were fabricated as resistive layers for Cu/NiOx/Pt and Cu/Cu:NiOx/Pt devices and their resistive switching properties were investigated. The two devices had reversible resistive switching properties, nondestructive readout, and long retention. However, the Cu/NiOx/Pt device had large voltage dispersions in the resistive switching operation. This work improved the voltage dispersions of the resistive switching operation by Cu-doping in the NiOx thin film. The operating voltages of the Cu/Cu:NiOx/Pt device were also smaller than those of the Cu/NiOx/Pt device. This study suggests the conducting filament model to explain resistive switching behavior and improved resistive switching dispersions. The Cu-doping method produced more defects within the NiOx thin film, which improved voltage dispersion and decreased operation voltages.
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