Abstract
Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω·cm with a temperature coefficient of resistance (TCR) from −1.7% to −3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω·cm with a TCR from −2.2% to −3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.
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