Abstract
In this paper, we propose an oxygen-doped amorphous boron nitride (O-doped a-BN)-based resistive random-access memory (RRAM) to address the low on/off ratio and stability concerns of conventional a-BN-based RRAM. Initially, comparative analysis with a-BN based RRAM device revealed that the O-doped a-BN based RRAM exhibited 2.5-fold increase in the on/off ratio, enhanced endurance with stable operation over 100 DC cycles, and improved retention stability lasting for 104 s. Then, on the basis of both interface and bulk trap analysis using impedance spectroscopy and the Terman method, the bulk trap density in the O-doped a-BN and a-BN films acts as a key parameter in RS properties, which results in an increase of its on/off ratio and its stable retention without any degradation. These findings show that O-doping in a-BN films can be a technique to improve the on/off ratio and reliability of a-BN-based RRAM devices.
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