Abstract
A nitride film has been oxidized in a wet (O:H = 8:1) ambient or N 2O atmosphere at different temperatures and times and the electrical characteristics have been studied. It was found that the reliability of MOS capacitors with a wet oxidized nitride film is better than that of N 2O oxidized nitride film grown (1100°C, 30 s) samples. In addition it was found that the TDDB characteristics are improved with an increase of the N 2O oxidation temperature and time. The improvement of the MOS capacitors with a wet oxidized nitride film can be attributed to the more efficient replacement of excess Si atoms and H-related species such as SiH bonds, which makes the ON layer more resistive and with less trap sites than the N 2O oxidized nitride film.
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