Abstract
The improved process flow differs from the known ones in the fact that the same photomask is used for formation of a channel stopper and metal contacts. Such approach has made it possible not only to decrease a number of the used phototomasks but it has also permitted to obtain a device with the required electrical characteristics. The paper presnts results of device and process simulation of bipolar static induction transistor (BSIT) manufactured in accordance with the improved process flow, measuring data of electrophysical parameters of its experimental samples and also comparison of simulation results with experimental data. At present there is a large quantity of software products that permit to perform physico-topological simulation of semiconductor structures. The device-process simulation is considered as a part of such simulation and it allows prior to obtaining experimental samples to determine process flow parameters at which the investigated structure will have necessary electrical parameters and characteristics. Thus the device-process simulation represents a certain “virtual production” for manufacturing semiconductor devices and microcircuits beginning from the startup stage of semiconductor wafer at production site and finishing by electrical characteristics measurements of the obtained structure. The BSIT device simulation being an analog of direct measurements of current-voltage characteristics has been performed with help of program system MOD-1D developed by the author. The BSIT model based on the fundamental system of semiconductor equations is mainly used for calculation of the BSIT current-voltage characteristics direct branch and its parameters and charge carrier recombination is described by Shockley – Read – Hall expression and equation depicting the Auger recombination process.
Highlights
Electronic Systems tomasks but it has permitted to obtain a device with the required electrical characteristics
The device-process simulation is considered as a part of such simulation and it allows prior to obtaining experimental samples to determine process flow parameters at which the investigated structure will have necessary electrical parameters and characteristics
The device-process simulation represents a certain “virtual production” for manufacturing semiconductor devices and microcircuits beginning from the startup stage of semiconductor wafer at production site and finishing by electrical characteristics measurements of the obtained structure
Summary
1)Филиал Научно-технический центр «Белмикросистемы» ОАО «ИНТЕГРАЛ» (Минск, Республика Беларусь). Приводятся результаты технологического и приборного моделирования биполярного транзистора со статической индукцией, изготовленного по усовершенствованному маршруту, и данные измерений электрофизических параметров его экспериментальных образцов, а также сравнение результатов моделирования с экспериментальными данными. На сегодняшний день существует большое количество программных продуктов, позволяющих выполнять физико-топологическое моделирование полупроводниковых структур. Частью такого моделирования является приборнотехнологическое, которое еще до получения экспериментальных образцов дает возможность определить, при каких параметрах технологического процесса исследуемая структура будет обладать необходимыми электрическими параметрами и характеристиками. В настоящей работе приборное моделирование биполярного транзистора со статической индукцией, являющееся аналогом прямых измерений вольт-амперной характеристики, выполнено с помощью разработанного автором комплекса программ MOD-1D. Ключевые слова: биполярный транзистор со статической индукцией, технологический маршрут, физико-топологическое моделирование, приборно-технологическое моделирование, «виртуальное производство», охранное кольцо, металлический контакт, пороговое напряжение. Л. Усовершенствованный технологический маршрут формирования биполярного транзистора со статической индукцией / Н.
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