Abstract
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET. Since the large part of the current is not confined at the semiconductor/insulator interface, we believe that it is a promising structure to take advantage of wide bandgap semiconductors that, despite the high mobility and breakdown voltage, still lack high-quality oxide–semiconductor interfaces. The device architecture is devised by means of device simulation both in static and dynamic conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
