Abstract
In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V2O5) thin films is deposited on glass substrate using spin coating route and annealed at 500 °C. The Cu/La-V2O5/n-Si Schottky barrier diodes with different La concentrations have fabricated. X-Ray Diffraction (XRD) characterization exposed the tetragonal crystal structure of La-V2O5 films. Field Emission Scanning Electron Microscopy (FE-SEM) morphology shows nanorod grain on La-V2O5 films. The decrease of optical gap (Eg) from 3.37 to 3.1 eV has been observed in UV-vis spectroscopy. The dc electrical conductivity is increased owing to the high-k-dielectric material influence of doping. Notably, La 4% doping exhibits high photo responsivity of 33.39 (mA/W) during fast switch response (ONOFF).
Published Version
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