Abstract
The properties of HfTiON as charge-trapping layer of metal-oxide-nitride-oxide-silicon memory are investigated, and effects of different Hf/Ti ratios in HfTiON films on the physical and electrical characteristics are analyzed. It is found that the higher the Ti content, the higher is the charge-trapping efficiency, thus, larger memory window and higher program/erase speeds. However, excessive Ti can diffuse to the HfTiON/SiO2 interface and cause the formation of a Ti-silicate interlayer, which deteriorates the retention of data. Experimental results indicate that the device with a Hf/Ti ratio of ∼1:1 can give a good trade-off between performance and reliability.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
