Abstract
High‐quality Yttrium iron garnet (YIG) films with crack‐free surface and improved magnetic performance were grown on platinum (Pt)‐buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak‐to‐peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt‐buffered Si substrates can be beneficial to the application of YIG films to integrated devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
