Abstract
To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 1011 cm−2).
Highlights
In the last six decades researchers used inorganic semiconductors such as silicon for electronic devices
All the devices were fabricated with the geometry of bottom gate-top contacts
The large grain sizes of organic semiconductors is an important parameter for the fabrication of high-mobility thin film transistors as it allows higher current when used as the active layer
Summary
In the last six decades researchers used inorganic semiconductors such as silicon for electronic devices. The development of organic devices (OD) over their inorganic counterparts in the form of thin films (TFs) has appropriate place in the research of electronic devices, such as organic transistors, organic photovoltaic, organic memory structures, and organic light emitting diodes [1,2]. Organic memory devices have attracted researchers in the last few years for their numerous advantages such as low-cost fabrication, simple fabrication processing, large area devices, light weight, solution process ability and single transistor realization [2,3]. Considerable interest has been focused on the development of organic memory transistors that can combine the properties of high speed, high density, and low cost with non-volatility. There are three main types of organic thin film memory transistors (OTFMTs) depending on the storage mechanisms and charge storage [4,5,6];
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