A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers.

Abstract

A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases. The AFM technique analyzes surface dislocation characteristics by detecting surface pits caused by dislocations, which are easily affected by sample and probe conditions. A prevalent method for assessing the crystal quality of GaN is the rocking curve of HR-XRD (ω-scan), which calculates the dislocation density based on the FWHM value of the curves. By comparing the above four dislocation characterization methods, the advantages and limitations of each method are clarified, which also verifies the applicability of DB=β29b2 for GaN-on-Si epitaxial wafers. This provides an important reference value for dislocation characterization in GaN-on-Si materials. The accuracy evaluation of dislocation density can truly and reliably reflect crystal quality, which is conducive to further optimization. Furthermore, this study can also be applied to other heterogeneous or homogeneous epitaxial materials.